product data sheet 1 triquint semiconductor texas phone: (972)994-8465 fax: (972) 994-8504 email: info-mmw@tqs.com web: www.triquint.com may 2012 ? rev ? wideband 1 w hpa with agc TGA2509-FL lot code key features ? frequency range: 2-20 ghz ? > 29 dbm nominal p1db ? 15 db nominal gain, midband ? 25db agc range ? 10 lead flange package style ? bias conditions: vd = 12 v, idq = 1.1 a ? package dimensions: 0. 7 x 0.3 x 0.1 in. primary applications ? wideband gain block ? military ew and ecm ? test equipment ? millimeter radio ? vsat ? space measured fixtured data bias conditions: vd =12 v, id= 1.1 a product description the triquint TGA2509-FL is a wideband high power amplifier with 25 db agc range. the hpa operates from 2-20 ghz and is designed using triquint?s power phemt production process. the TGA2509-FL provides typical 29dbm of output power at 1 db gain compression with small signal gain of 15 db. the TGA2509-FL is suitable for a variety of wideband electronic warfare systems such as radar warning receivers, electronic counter measures,decoys, jammers and phased array systems. the flange lead package has a high thermal conductivity copper alloy base. evaluation boards are available. note: datasheet is subject to change without notice. www.datasheet.net/ datasheet pdf - http://www..co.kr/
product data sheet 2 triquint semiconductor texas phone: (972)994-8465 fax: (972) 994-8504 email: info-mmw@tqs.com web: www.triquint.com may 2012 ? rev ? TGA2509-FL table i maximum ratings 1/ symbol parameter value notes v + positive supply voltage 12.5 v 2/ v g1 gate 1 supply voltage range -2v to 0 v v g2 gate 2 supply voltage range -2v to 0 v v c agc control voltage range v c < +5 v v + ?v c < 14v i + positive supply current 1.4 a 2/ | i g | gate supply current 70 ma p in input continuous wave power 30 dbm 2 / p d power dissipation (without using agc) 13.2 w 2/, 3 / p d power dissipation (when vc < +2v) 10.6 w 2/, 3 / t ch operating channel temperature 200 c 4 / t m mounting temperature (30 seconds) 230 c t stg storage temperature -65 to 150 c 1 / these ratings represent the maximum operable values for this device. 2 / current is defined under no rf drive conditions. combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 3 / when operated at this power dissipation with a base plate temperature of 60 c, the median life is 1 e+6 hours. 4 / junction operating temperature will directly affect the device median time to failure (t m ). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. www.datasheet.net/ datasheet pdf - http://www..co.kr/
product data sheet 3 triquint semiconductor texas phone: (972)994-8465 fax: (972) 994-8504 email: info-mmw@tqs.com web: www.triquint.com may 2012 ? rev ? table ii rf characterization table (t a = 25 c, nominal) vd = 12 v, id = 1.08 a symbol parameter test condition nominal units gain small signal gain f = 2-20 ghz 15 db irl input return loss f = 2-20 ghz 10 db orl output return loss f = 2-20 ghz 12 db p 1db output power @ 1db gain compression f = 2-20 ghz 29 dbm table iii thermal information parameter test conditions t ch ( o c) r jc ( c/w) t m (hrs) r jc thermal resistance (channel to backside of package) vd = 12 v i d = 1.08 a pdiss = 13.2 w (without using agc) 150 6.4 1 e+6 r jc thermal resistance (channel to backside of package) vd = 12 v i d = 0.88 a pdiss = 10.6 w (when using agc) 150 8.3 1 e+6 note: package attached with mounting hardware and metal shim (al or in) to carrier at 65 c baseplate temperature. worst case is at saturated output power when dc power consumption rises to 15 w with 1 w rf power delivered to load. power dissipated is 14 w and the temperature rise in the channel is 90 c. baseplate temperature must be reduced to 60 c to remain below the 150 c maximum channel temperature. TGA2509-FL www.datasheet.net/ datasheet pdf - http://www..co.kr/
product data sheet 4 triquint semiconductor texas phone: (972)994-8465 fax: (972) 994-8504 email: info-mmw@tqs.com web: www.triquint.com may 2012 ? rev ? median lifetime vs channel temperature www.datasheet.net/ datasheet pdf - http://www..co.kr/
product data sheet 5 triquint semiconductor texas phone: (972)994-8465 fax: (972) 994-8504 email: info-mmw@tqs.com web: www.triquint.com may 2012 ? rev ? typical fixtured performance bias conditions: vd = 12v, id = 1.08a, vg 1 = -0.28v typical, vg2 = -0.35v ty pical, vc (optional) = 2.6v typical TGA2509-FL www.datasheet.net/ datasheet pdf - http://www..co.kr/
product data sheet 6 triquint semiconductor texas phone: (972)994-8465 fax: (972) 994-8504 email: info-mmw@tqs.com web: www.triquint.com may 2012 ? rev ? typical fixtured performance bias conditions: vd = 12v, id = 1.08a, vg 1 = -0.28v typical, vg2 = -0.35v ty pical, vc (optional) = 2.6v typical TGA2509-FL www.datasheet.net/ datasheet pdf - http://www..co.kr/
product data sheet 7 triquint semiconductor texas phone: (972)994-8465 fax: (972) 994-8504 email: info-mmw@tqs.com web: www.triquint.com may 2012 ? rev ? package dimensional drawing units: inches gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. TGA2509-FL www.datasheet.net/ datasheet pdf - http://www..co.kr/
product data sheet 8 triquint semiconductor texas phone: (972)994-8465 fax: (972) 994-8504 email: info-mmw@tqs.com web: www.triquint.com may 2012 ? rev ? evaluation board drawing vc vg1 vd vg2 rf in rf out gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. bias procedures: vc bias connection is optional, but the 0.1uf cap always needs to be connected. for biasing without agc control: 1. apply -1.2v to vg1, and -1.2v to vg2. 2. apply +12v to vd. 4. adjust vg1 to attain 580 ma drain current (id) 4. adjust vg2 to attain 1080 ma total drain current (id). for biasing with agc control: 1. apply -1.2v to vg1 and -1.2v to vg2 2. apply +12v to vd 3. apply +2.6v to vc 4. adjust vg1 to attain 580 ma drain current (id) 5. adjust vg2 to attain 1080 ma total drain current (id). 6. adjust vc as needed to control gain level. TGA2509-FL www.datasheet.net/ datasheet pdf - http://www..co.kr/
product data sheet 9 triquint semiconductor texas phone: (972)994-8465 fax: (972) 994-8504 email: info-mmw@tqs.com web: www.triquint.com may 2012 ? rev ? typical evaluation board layout lot code date code tga2509 6 4 9 10 1 7 8 5 vc vg2 vd vg1 3 2 11 33uf 33uf 33uf gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. component value 1, 4, 9,10 1 uf 2, 5, 9 10 3, 6, 7 0.01 uf 11 100 TGA2509-FL www.datasheet.net/ datasheet pdf - http://www..co.kr/
product data sheet 10 triquint semiconductor texas phone: (972)994-8465 fax: (972) 994-8504 email: info-mmw@tqs.com web: www.triquint.com may 2012 ? rev ? assembly of a TGA2509-FL flange mount package onto a motherboard manual assembly for prototypes 1. clean the motherboard or the similar module with aceton e. rinse with alcohol and di water. allow the circuit to fully dry. 2. to improve the thermal and rf performance, triquint recommends a heat sink attached to the bottom of the package with an indium alloy pref orm, or equivalent, between the two. 3. apply tin/lead solder, or equivalent, to each active pin of the TGA2509-FL. 4 clean the assembly with alcohol. ordering information part package style tg2509-fl flange (leads bolted down) gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. TGA2509-FL www.datasheet.net/ datasheet pdf - http://www..co.kr/
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